Amorphous High-Entropy Hydroxides of Tunable Wide Solar Absorption for Solar Water Evaporation

The high-entropy materials have raised much attention in recent years due to their extraordinary performances in mechanical, catalysis, energy storage fields. Herein, a new type of high-entropy hydroxides (e.g., NiFeCoMnAl(OH)_x) that are amorphous and capable of broad solar absorption is reported. A facile one-pot co-precipitation method is employed to synthesize these amorphous high-entropy hydroxides (a-HEHOs) under ambient conditions. The a-HEHOs thus obtained display widely tunable bandgap (e.g., from 2.6 to 1.1 eV) due to their high-entropy and amorphous characteristics, enabling efficient light absorbance and photothermal conversion in the solar regime. Further solar water evaporation measurements show that the a-HEHOs delivered a considerable energy conversion efficiency of 55%, comparable to black titanium oxides that are synthesized using more complex and expensive methods.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

椭球粒子声辐射力计算及分析

针对水下椭球粒子,以声散射理论为基础,采用分波序列的方法,建立了椭球粒子声辐射力的理论计算模型。进而根据声辐射力计算公式,以刚性椭球粒子和液体椭球粒子为例,计算并分析不同Bessel波束作用下椭球粒子的轴向声辐射力函数特征。数值仿真计算结果表明,对于刚性椭球粒子,扁平椭球粒子相对于细长椭球粒子更有助于激发负声辐射力；对于液体椭球粒子,细长椭球粒子相对于扁平椭球粒子更加容易产生负声辐射力；对于不同介质的椭球粒子,不同的入射波束激发的负声辐射力的效果也存在明显的差异。该结果为复杂的尺寸和介质粒子声操控技术提供了理论的可行性。     

Stochastic sensitivity analysis of coupled acoustic-structural systems under non-stationary random excitations

This paper presents a new sensitivity analysis method for coupled acoustic–structural systems subjected to non-stationary random excitations. The integral of the response power spectrum density (PSD) of the coupled system is taken as the objective function. The thickness of each structural element is used as a design variable. A time-domain algorithm integrating the pseudo excitation method (PEM), direct differentiation method (DDM) and high precision direct (HPD) integration method is proposed for the sensitivity analysis of the objective function with respect to design variables. Firstly, the PEM is adopted to transform the sensitivity analysis under non-stationary random excitations into the sensitivity analysis under pseudo transient excitations. Then, the sensitivity analysis equation of the coupled system under pseudo transient excitations is derived based on the DDM. Moreover, the HPD integration method is used to efficiently solve the sensitivity analysis equation under pseudo transient excitations in a reduced-order modal space. Numerical examples are presented to demonstrate the validity of the proposed method.     

单颗金刚石切削无氧铜的声发射关联维特征*

声发射技术可以实现无氧铜切削加工特征的监测与评价。采用声发射技术监测单颗金刚石磨粒旋转切削无氧铜，利用G-P算法重构出声发射时域信号相空间，采用自相关函数法计算出相空间时间延迟参数，通过相空间双对数曲线的计算，得到不同切削工况下的关联维数。研究结果表明，进给速度和切削速度对声发射信号影响较不显著，切深与声发射信号振幅呈正效应关系；声发射信号双对数曲线呈现阶段性增加趋势，并逐渐收敛于饱和状态，关联维数随着嵌入维数的增加先快速下降后趋于平稳；金刚石切削无氧铜的声发射信号具有混沌运动变化特性，在较小嵌入维数时，关联维数与切深和切削速度呈现线性负效应关系，与进给速度呈现线性正效应关系。该研究为无氧铜的切削加工提供理论参考。     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.     

水下对转螺旋桨流致辐射噪声机理与预报方法*

水下对转螺旋桨流致辐射噪声的预报对于水下目标的特征提取和分类识别具有重要意义。由桨叶的旋转引起的湍流场是水下对转螺旋桨流致辐射噪声的源场。分述了水下对转螺旋桨湍流边界层脉动、旋转干涉效应和空化效应引发的水动力噪声机制和研究进展,比较了目前工程应用中的3种对转螺旋桨流致辐射噪声预报方法的特点。在分析对转螺旋桨流致辐射噪声数值预报难点的基础上,综述了对转螺旋桨流致辐射噪声计算方法的研究进展,指出间接数值模拟方法是工程中进行对转螺旋桨流致辐射噪声预报的有效方法。     

Mixed Fano-SP resonant absorption of THz electromagnetic waves in a photonic resonator contacting with a metal film

In terahertz frequency region, we have investigated theoretically the correlation between spectra of a free photonic structure and that deposited on a metal for several models of metal. It was found that for quasi-normal incidence of p-polarized electromagnetic field the presence of metal generates narrow spectral wells in the middle of reflection windows existing in a free photonic crystal. Quite another manifestation of metal-resonator inter-influence takes place at incident angles exceeding the Brewster angle when reflection spikes coincide with modes of photonic crystal resonator and they are absent throughout the stopband areas. The effects are strongly depended on polarization, number of periods and angle of incidence.     

Meshless acoustic analysis using a weakly singular Burton-Miller boundary integral formulation

The Burton-Miller boundary integral formulation is solved by a complex variable boundary element-free method (CVBEFM) for the boundary-only meshless analysis of acoustic problems with arbitrary wavenumbers. To regularize both strongly singular and hypersingular integrals and to avoid the computation of the solid angle and its normal derivative, a weakly singular Burton-Miller formulation is derived by considering the normal derivative of the solid angle and adopting the singularity subtraction procedures. To facilitate the implementation of the CVBEFM and the approximation of gradients of the boundary variables, a stabilized complex variable moving least-square approximation is selected in the meshless discretization procedure. The results show the accuracy and efficiency of the present CVBEFM and reveal that the method can produce satisfactory results for all wavenumbers, even for extremely large wavenumbers such as k = 10 000.